尊龙凯时

CN EN
Home
About Us
Newpros
1200V 80 mΩ SIC MOSFET
1200V 80 mΩ SIC MOSFET Back
 PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.
Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.
SPECIFICATION

YJD212080NCFG1

Related new products

SOD-123HE Diode

TOLL Package SiC MOSFET

Power Transistors for Energy storage,Industrial Control,Consumer Electronics,etc

SGT N60V MOSFET for Clean Energy Field

Automotive IGBT for 800V Voltage Platform PTC Heater of New Energy Vehicles

Micro-pattern Trenches IGBT for Servo Controller & Frequency Converter & Industrial Power Supply

Small Signal Schottky and Switching Diode in DFN0603 Package

Optimization Design of Rectifier Bridge —— New Package GBU-L

Low VCE(sat)?3A?Bipolar?Transistor

SMB-W Package EM540BG
网站地图